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| Datasheet File OCR Text: |
| H1061 TRIPLE DIFFUSED SILICON NPN TRANSISTOR ... designed for low frequency power amplifier MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Peak) Collector power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PC TJ Tstg Value 100 80 5 4 8 40 150 -55~150 Unit V V V A A W C C 1 : Base 2 : Collector (Heat Sink) 3 : Emitter Unit in mm TO-220AB Weight: 1.9g ELECTRICAL CHARACTERISTICS Characteristic Collector Cut Off Current Collector - Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base Emitter Voltage Transition Frequency Collector Out put Capacitance Symbol ICBO V(BR)CEO hFE VCE(sat) VBE fT Test Condition VCB = 80V, IE = 0A IC = 50mA, IB = 0A VCE = 4V, IC = 1A VCE = 4V, IC = 0.1A IC = 2A, IB = 0.2A VCE = 4V, IC = 1A VCE = 5V, IC = 0.5A VCB = 20V, IE = 0A, f=1MHz Min. 80 60 35 - Typ. 10 40 Max. 100 200 1 1.5 - Unit A V V V MHz Pf HIGH POWER DISSIPATION MEDIUM SPEED POWER SWITCHING Cob Classification of hFE Rank Range B 60 to 120 C 100-200 TO - 220AB PMC reserves the right to make changes without further notice to any products herein. PMC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does PMC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the reader therefore we shall not undertake any responsibility for the exercise of rights by third parties. PMC Components Pte Ltd. , Singapore, 2000 |
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